收藏本站
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
3
V GS = 10V
9.0
8.0
7.0
2 .5
V GS =4.0V
4 .5
5 .0
1 .5
1
6.0
2
6 .0
7 .0
5.0
1 .5
8 .0
9 .0
10
0 .5
4.0
1
0
0
1
2
3
4
3.0
5
0 .5
0
0 .4
0 .8
1 .2
1 .6
2
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2
V GS = 10V
I D , DRA IN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3
V GS = 10V
1.75
I D = 500m A
2 .5
1.5
1.25
1
0.75
2
1 .5
1
0 .5
T J = 1 2 5 ° C
25°C
-55°C
0.5
-5 0
-2 5
0
25
50
75
100
125
150
0
0
0 .4
0 .8
1 .2
1 .6
2
2
T J , JUNCTION T EMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1 .1
1.6
V DS = 10V
T J = -55°C
25°C
125°C
1 .0 5
V DS = V GS
I D = 1 mA
1
1.2
0 .9 5
0.8
0 .9
0.4
0 .8 5
0
0
2
4
6
8
10
0 .8
-50
-25
0
25
50
75
100
125
150
V
GS
, GATE TO SOURCE VOLTAGE (V)
T J , JUNCTION TEM PERATURE (°C)
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
2N7000.SAM Rev. A1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
2N7002A-7 MOSFET N CH 60V 180MA SOT23
2N7002DW-7 MOSFET N-CHANEL DUAL 60V SOT-363
2N7002DW MOSFET N CH DL 60V 115MA SC70-6
2N7002E-7-F MOSFET N-CH 60V 240MA SOT23-3
2N7002ET3G MOSFET N-CH 60V 260MA SOT-23
2N7002K-7 MOSFET N-CH 60V 300MA SOT23-3
2N7002KT3G MOSFET N-CH 60V 320MA SOT-23
2N7002KW MOSFET N-CH 60V 310MA SOT323
相关代理商/技术参数
2N7002-01 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
2N7002-13-F 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET N-CH 60V 0.21A 3-Pin SOT-23 T/R 制造商:DIODES 功能描述:N-CHANNEL MOSFET/ SOT-23
2N7002215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 300MA 3-SOT-23
2N7002-215 制造商:NXP Semiconductors 功能描述:2N7002-215
2N70027 制造商:Diodes Incorporated 功能描述: 制造商:Vishay Intertechnologies 功能描述:
2N7002-7 功能描述:MOSFET 60V 200mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002-7-12-F 制造商:DIODES 功能描述:N-CHANNEL MOSFET/ SOT-23
2N70027F 制造商:Diodes Incorporated 功能描述: